Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AlN Thin Films-Reference-Cited by-同舟云学术

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Low-Temperature Growth and Measurement of Oxygen in Reactively Sputtered AlN Thin Films

Published:1995-08-15 Issue:Part 1, No. 8A Volume:34 Page:4154-4158
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kumar Sunil,Tansley T. L.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. The dispersion properties of surface acoustic wave devices on AlN/LiNbO3 film/substrate structure;Applied Surface Science;2004-05

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