Improving X-Ray Mask Pattern Placement Accuracy by Correcting Process Distortion in Electron Beam Writing-Reference-Cited by-同舟云学术

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Improving X-Ray Mask Pattern Placement Accuracy by Correcting Process Distortion in Electron Beam Writing

Published:1995-12-30 Issue:Part 1, No. 12B Volume:34 Page:6743-6747
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uchiyama Shingo,Ohki Shigehisa,Ozawa Akira,Oda Masatoshi,Matsuda Tadahito,Morosawa Tetsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mask for Proximity X-Ray Lithography;Handbook of Photomask Manufacturing Technology;2005-04-07

2. Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

3. Fabrication of NIST-format x-ray masks with 4-Gb DRAM patterns;SPIE Proceedings;2001-09-05

4. Up-to-date activities of PXL (proximity x-ray lithography);SPIE Proceedings;2001-09-05

5. Evaluation of image placement correction method for EB X-ray mask writing;Microelectronic Engineering;2001-09

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