Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Discrete trapping levels of localized states in amorphous silicon nitride;Journal of Applied Physics;2024-07-03
2. Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films;Japanese Journal of Applied Physics;2024-04-01
3. A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics;Japanese Journal of Applied Physics;2021-07-27
4. Re-consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08
5. Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04
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