Control of Microstructure and Optoelectronic Properties of Si:H Films by Argon Dilution in Plasma-Enhanced Chemical Vapor Deposition from Silane-Reference-Cited by-同舟云学术

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Control of Microstructure and Optoelectronic Properties of Si:H Films by Argon Dilution in Plasma-Enhanced Chemical Vapor Deposition from Silane

Published:1995-07-15 Issue:Part 1, No. 7A Volume:34 Page:3467-3473
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chaudhuri Partha,Das Ujjwal Kumar

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new look at an explanation of band gap of PECVD grown a-Si:H thin films using absorption spectra, spectroscopic ellipsometry, Raman, and FTIR spectrosopy;Optical Materials;2024-08

2. Role of Ar dilution of SiH4/PH3 gas mixture on PECVD based film growth process, hydrogen bonding configuration, and optical properties of n-type a-Si:H thin films;Chemical Physics;2023-11

3. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells;Journal of Alloys and Compounds;2015-09

4. Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases;Thin Solid Films;2012-11

5. Enhancing optical properties of nanocrystalline silicon films with air exposure;Materials Science in Semiconductor Processing;2008-08

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