Ultra High Vacuum Reflection Electron Microscopy Study of Step-Dislocation Interaction on Si(111) Surface-Reference-Cited by-同舟云学术

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Ultra High Vacuum Reflection Electron Microscopy Study of Step-Dislocation Interaction on Si(111) Surface

Published:1995-10-15 Issue:Part 1, No. 10 Volume:34 Page:5768-5773
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Latyshev Alexander,Minoda Hiroki,Tanishiro Yasumasa,Yagi Katsumichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Log-Normal Glide and the Formation of Misfit Dislocation Networks in Heteroepitaxial ZnS on GaP;Crystal Growth & Design;2024-07-03

2. Step pinning and hillock formation in (Al,Ga)N films on native AlN substrates;Journal of Applied Physics;2022-12-14

3. Atomic Processes on the Silicon Surface;Advances in Semiconductor Nanostructures;2017

4. Formation of Surface Patterns Observed with Reflection Electron Microscopy;In-Situ Electron Microscopy;2012-04-24

5. Step Bunching on Silicon Surface Under Electromigration;Nanophenomena at Surfaces;2010-11-30

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