More than $\bf 10^{3}$ Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells-Reference-Cited by-同舟云学术

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More than $\bf 10^{3}$ Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells

Published:1995-04-15 Issue:Part 2, No. 4B Volume:34 Page:L495-L498
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hasegawa Hideki,Kodama Satoshi,Koyanagi Satoshi,Hashizume Tamotsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity;Japanese Journal of Applied Physics;2011-10-20

2. Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity;Japanese Journal of Applied Physics;2011-10-01

3. Capacitance-voltage and photoluminescence study of high-k∕GaAs interfaces controlled by Si interface control layer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

4. Surface passivation of epitaxial multilayer structures for InP-based high-speed devices by an ultrathin silicon layer;Electronics and Communications in Japan (Part II: Electronics);2002-09-18

5. Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4×4) surfaces;Applied Surface Science;2002-05

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