Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube-Reference-Cited by-同舟云学术

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Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube

Published:1968-11 Issue:11 Volume:7 Page:1324-1331
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Seki Hisashi,Moriyama Kooichi,Asakawa Izumi,Horie Souji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Thin Films by Chemical Vapour Deposition;1990

2. Vapor Phase Epitaxy of AlGaAs by Direct Reaction between AlCl3, GaCl3and AsH3/H2;Japanese Journal of Applied Physics;1989-01-20

3. Vapor Phase Epitaxial Growth of AlAs by Chloride Transport Method;Journal of The Electrochemical Society;1987-06-01

4. Physicochemical analysis of InAs gas phase epitaxy in the InAs-AsCl3-H2 system II: InAs transport and epitaxial growth kinetics;Thin Solid Films;1987-02

5. Chemical transport ofβ-Ga2O3 using chlorine as a transporting agent;Journal of Materials Science;1986-10

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