Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories-Reference-Cited by-同舟云学术

Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories

Published:2010-08-20 Issue:8 Volume:49 Page:084301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Doo-Hyun,Cho Seongjae,Li Dong Hua,Yun Jang-Gn,Lee Jung Hoon,Lee Gil Sung,Kim Yoon,Shim Won Bo,Park Se Hwan,Kim Wandong,Shin Hyungcheol,Park Byung-Gook

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. A low voltage SONOS nonvolatile semiconductor memory technology

2. Design and scaling of a SONOS multidielectric device for nonvolatile memory applications

3. NROM: A novel localized trapping, 2-bit nonvolatile memory cell

4. Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film

5. Mosfet Models, Quantum Mechanical Effects and Modeling Approaches: A Review

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