Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects-Reference-Cited by-同舟云学术

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Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects

Published:2010-04-20 Issue:4 Volume:49 Page:044201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kobayashi Yusuke,Tsutsui Kazuo,Kakushima Kuniyuki,Ahmet Parhat,Rao V. Ramgopal,Iwai Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Statistical threshold-voltage variation and its impact on supply-voltage scaling

2. Nanoscale Device Modeling and Simulation: Fin Field-Effect Transistor (FinFET)

3. A Modified Local Density Approximation. Electron Density in Inversion Layers

4. A physically based mobility model for numerical simulation of nonplanar devices

5. Carrier mobilities in silicon empirically related to doping and field

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Threshold Voltage Variations in Fin Field Effect Transistors;Key Engineering Materials;2011-02

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