New Ordering of the InAs Growth through High-Temperature Treatment of the GaAs (100) Substrates
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Published:2003-04-15
Issue:Part 2, No. 4B
Volume:42
Page:L410-L413
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Saucedo-Zeni Nadia,Yu Gorbatchev Andrei,Méndez-García Víctor-Hugo
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering