Low-Temperature Growth of Au on H-Terminated Si(111): Instability of Hydrogen at the Au/Si Interface Revealed by Non-Destructive Ultra-Shallow H-Depth Profiling
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=7S/a=4650/pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis;Journal of Visualized Experiments;2016-03-29
2. Hydrogen detection near surfaces and shallow interfaces with resonant nuclear reaction analysis;Surface Science Reports;2014-12
3. Diffusion and clustering of Au adatoms on H-terminated Si(111)-(1×1): A first principles study;The Journal of Chemical Physics;2009-10-14
4. Hydrogen absorption in oxide-supported palladium nanocrystals;Physical Review B;2008-03-31
5. Varying the Schottky barrier of thin film Mg∕H:p-Si(111) contacts: Properties and applications;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-07
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