Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy

Published:2003-10 Issue:Part 2, No. 10A Volume:42 Page:L1195-L1197
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oh Ho-jin,Sugiyama Masakazu,Nakano Yoshiaki,Shimogaki Yukihiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=10A/a=L1195/pdf

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si;Journal of Applied Physics;2015-04-14

2. Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission;IEEE Journal of Selected Topics in Quantum Electronics;2009-07

3. Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique;Japanese Journal of Applied Physics;2009-04-20

4. Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics;Journal of Crystal Growth;2008-06

5. Reactor-scale uniformity of selective-area performance in InGaAsP system;Journal of Crystal Growth;2007-01

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