Device Transfer Technology by Backside Etching (DTBE) for Poly-Si Thin-Film Transistors on Glass/Plastic Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=9A/a=L1044/pdf
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration;Japanese Journal of Applied Physics;2020-02-04
2. Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer;IEEE Journal of the Electron Devices Society;2019
3. Tailoring the energy band in flexible photodetector based on transferred ITO/Si heterojunction via interface engineering;Nanoscale;2018
4. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films;AIP Advances;2018-01
5. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates;Japanese Journal of Applied Physics;2015-03-20
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