Three Dimensional Crystallization Simulation and Recording Layer Thickness Effect in Phase Change Optical Recording
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=2S/a=800/pdf
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties;physica status solidi (RRL) – Rapid Research Letters;2023-02-11
2. Boolean Logic Function Realized by Phase-Change Blade Type Random Access Memory;IEEE Transactions on Electron Devices;2022-04
3. Arrhenius behavior of crystallization at up to 184 000 K/s in Ge2Sb2Te5 thin films;AIP Advances;2021-08-01
4. Performance of an optical non-volatile Ge2Sb2Te5-based storage element;Journal of Physics: Conference Series;2020-12-01
5. Chalcogenides for Phase-Change Memory;Recent Advances, Techniques and Applications;2018
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