Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
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Published:2003-11-10
Issue:Part 1, No. 11
Volume:42
Page:6795-6799
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Lin Ming-Jang,Liaw Chorng-Wei,Chang Fang-Long,Cheng Huang-Chung
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering