Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs (111)A Substrates-Reference-Cited by-同舟云学术

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Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs (111)A Substrates

Published:2003-07-15 Issue:Part 2, No. 7B Volume:42 Page:L807-L809
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mashita Masao,Numata Toshifumi,Nakazawa Hideki,Kajikawa Yasutomo,Koo Bon-Heun,Makino Hisao,Yao Takafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=7B/a=L807/pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots;Journal of Applied Physics;2009-05

2. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1−xInxAs/GaAs quantum wells;Journal of Applied Physics;2009-04-15

3. Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule;Journal of Applied Physics;2008-09-15

4. Theoretical study of the effect of nonlinear piezoelectricity on the pressure coefficient of the light emission in (111)-orientedInGaAs∕GaAsquantum wells;Physical Review B;2008-04-28

5. The vertical coupling effect on the electronic states in self-assembled InAs/GaAs quantum dots;Solar Energy Materials and Solar Cells;2006-06

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