Low-Temperature Polysilicon Thin Film Transistors by Non-Mass-Separated Ion Flux Doping Technique-Reference-Cited by-同舟云学术

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Low-Temperature Polysilicon Thin Film Transistors by Non-Mass-Separated Ion Flux Doping Technique

Published:1990-12-20 Issue:Part 2, No. 12 Volume:29 Page:L2377-L2379
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Masumo Kunio,Kunigita Masaya,Takafuji Satoshi,Nakamura Nobuhiro,Iwasaki Atsushi,Yuki Masanori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deposition of Intrinsic and Doped Semiconductor Thin Films for a-Si:H TFT;Thin Film Transistors;2004

2. Single-Crystalline Regions of Silicon-on-Glass for Thin-Film Transistors;Solid State Phenomena;2001-11

3. Control of Surface Concentration of Boron or Phosphorus Employing Ion Shower Doping;Journal of The Electrochemical Society;1996-02-01

4. Low Temperature Polysilicon Materials and Devices;MRS Proceedings;1996

5. Plasma Etching and Deposition for a‐Si:H Thin Film Transistors;Journal of The Electrochemical Society;1995-07-01

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