Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
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Published:1990-07-20
Issue:Part 1, No. 7
Volume:29
Page:1248-1249
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Ono Katsuji,Saito Junji,Nanbu Kazuo,Kondo Kazuo
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering