High-Power and High-Efficiency P-GaAlAs/N-GaAs:Si Single-Heterostructure Infrared Emitting Diodes
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Published:1990-12-20
Issue:Part 1, No. 12
Volume:29
Page:2694-2697
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Nakamura Shuji,Takagi Hironori
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering