Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS Transistors-Reference-Cited by-同舟云学术

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Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS Transistors

Published:1985-09-20 Issue:Part 2, No. 9 Volume:24 Page:L733-L735
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uchida Yasutaka,Ikegami Takashi,Matsumura Masakiyo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. a-Si:H TFT Thin Film and Substrate Materials;Thin Film Transistors;2004

2. Acoustical properties of disordered ferroelectrics;Ferroelectrics;1990-12

3. Low-Temperature Thermal Oxidation of Silicon in N2O by UV-Irradiation;Japanese Journal of Applied Physics;1989-08-20

4. Thin-film transistors incorporating a thin, high-quality PECVD SiO/sub 2/ gate dielectric;IEEE Electron Device Letters;1988-11

5. p-Channel Amorphous Silicon Thin-Film Transistors with High Hole Mobility;Japanese Journal of Applied Physics;1988-10-20

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