Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System-Reference-Cited by-同舟云学术

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Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System

Published:1985-08-20 Issue:Part 1, No. 8 Volume:24 Page:1030-1035
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hiramatsu Kazumasa,Tanaka Shigeyasu,Sawaki Nobuhiko,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Initial Condition and Calculation Method for the Numerical Simulation of LPE;JOURNAL OF CHEMICAL ENGINEERING OF JAPAN;2007

2. Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model;IPSJ Digital Courier;2007

3. Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy;Il Nuovo Cimento D;1995-02

4. Calculation of Layer Thickness and Composition Variations of AlxGa1-xAs Crystals for Diffusion-and Electromigration-Limited Growth;Japanese Journal of Applied Physics;1991-01-15

5. Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630°C;Japanese Journal of Applied Physics;1990-06-20

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