Double Zinc Diffusion Fronts in InP: Correlation with Models of Varying Charge Transfer during Interstitial-Substitutional Interchange
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface analysis of InP and InGaAs after low temperature diffusion of Zinc;Semiconductor Science and Technology;2016-08-25
2. Effect of Fe inter‐diffusion on properties of InP layers grown with addition of RE elements;physica status solidi (c);2005-03
3. Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy;Journal of Applied Physics;1998-10-15
4. Stability of Zn doping profile in modulation‐doped multiple quantum well structure;Journal of Applied Physics;1996-08
5. Concentration dependent Zn diffusion in InP during metalorganic vapor phase epitaxy;Journal of Applied Physics;1995-09
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