Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation-Reference-Cited by-同舟云学术

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Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation

Published:1981-05 Issue:5 Volume:20 Page:901-907
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Asano Tanemasa,Atanassov Rosen D.,Ishiwara Hiroshi,Furukawa Seijiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation;Applied Sciences;2022-06-16

2. Planar strained layer superlattice infrared photodetector using ion implantation;Image Sensing Technologies: Materials, Devices, Systems, and Applications IX;2022-05-30

3. Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation;Photonics;2020-09-03

4. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation;Applied Physics Letters;2020-06-01

5. Arsenic antisite and oxygen incorporation trends in GaAs grown by water-mediated close-spaced vapor transport;Journal of Applied Physics;2017-03-07

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