Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon Wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of RTP pretreatment on slip-lines of argon annealed silicon wafer;Journal of Crystal Growth;2024-02
2. Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors;physica status solidi (a);2019-05-29
3. (Invited) Metallic Contamination Issues in Advanced Semiconductor Processing;ECS Transactions;2018-07-23
4. Gettering Behavior of Transition Metals in Low Energy, High Dose Ion Implanted Silicon;Solid State Phenomena;2012-04
5. Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits;Journal of Applied Spectroscopy;2010-07
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