Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge-Reference-Cited by-同舟云学术

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Preparation of High-Conductivity p-Type a-Si:H Films by Penning Discharge

Published:1981-12 Issue:12 Volume:20 Page:2431-2432
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mori Koshiro,Kitagawa Masatoshi,Hirao Takashi,Ishihara Shinichiro,Ohno Masaharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Quality p-Type µc-Si Films Prepared by the Solid Phase Crystallization Method;Japanese Journal of Applied Physics;1990-12-20

2. Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method;MRS Proceedings;1989

3. Transport Properties of B-, P-Doped and Undoped 50 kHz PECVD Microcrystalline Silicon;MRS Proceedings;1989

4. Artificial Epitaxy: New Developments and New Mechanisms;Growth of Crystals;1988

5. Amorphous silicon bibliography update introduction;Solar Cells;1983-01

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