Effects of the Dislocations on Minority Carrier Lifetime in Germanium-Reference-Cited by-同舟云学术

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Effects of the Dislocations on Minority Carrier Lifetime in Germanium

Published:1955-12-15 Issue:12 Volume:10 Page:1110B-1111
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Okada Jun'ichi¹

Affiliation:

1. Matsuda Research Laboratory, Tokyo-Shibaura Electric Co.

Publisher

Japan Society of Applied Physics

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.10.1110B

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018

2. Study on the effects of indentation-induced dislocations on the detector performance of CdZnTe crystals;Journal of Applied Physics;2017-12-14

3. Radiation-assisted Frenkel-Poole transport in single-crystal diamond;Applied Physics Letters;2013-08-19

4. Dislocations as electrically active centres in semiconductors half a century from the discovery;Journal of Physics: Condensed Matter;2002-11-22

5. Chapter 1 The Effect of Crystal Defects on Optoelectronic Devices;Defects, (HgCd)Se, (HgCd)Te;1981

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