Development of High Quality P-Type Hydrogenated Amorphous Silicon Oxide Film and Its Use in Improving the Performance of Single Junction Amorphous Silicon Solar Cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/41/i=2R/a=765/pdf
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optoelectronic and Structural Properties of Plasma Deposited Nanocrystalline Hydrogenated Silicon Oxide Thin Films;Nano;2021-09
2. The effect of double doped nc-Si:H tunnel recombination junction in a-Si:H/c-Si tandem solar cells;Semiconductor Science and Technology;2018-06-19
3. The Deep Level Defects with Boron Atoms Configuration in Amorphous Silicon Solar Cells by DLTS and XPS;Science of Advanced Materials;2018-03-01
4. Effect of oxide based graded buffer and bottom n-layer on the performance of the single junction amorphous silicon solar cells;Journal of Materials Science: Materials in Electronics;2017-07-13
5. Development of n-type microcrystalline SiOx:H films and its application by innovative way to improve the performance of single junction µc-Si:H solar cell;Journal of Materials Science: Materials in Electronics;2016-12-23
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