New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/41/i=12B/a=L1508/pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure;Semiconductors;2014-01
2. Light confinement effect of nonspherical nanoscale solid immersion lenses;Journal of Micro/Nanolithography, MEMS, and MOEMS;2013-06-12
3. Light confinement effect of non-spherical nanoscale solid immersion lenses;SPIE Proceedings;2013-03-05
4. Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09
5. Optical characterization of subwavelength-scale solid immersion lenses;Advanced Fabrication Technologies for Micro/Nano Optics and Photonics V;2012-02-09
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