Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory-Reference-Cited by-同舟云学术

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Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

Published:2002-02-15 Issue:Part 1, No. 2A Volume:41 Page:694-697
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kang Young Min,Chung Choong Heui,Oh Sang Hyun,Yang Beelyong,Lee Seaung Suk,Hong Suk Kyoung,Kang Nam Soo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=2R/a=694/pdf

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3. Preparation of lanthanum strontium cobalt oxide electrode on a Si wafer for stress engineering of ferroelectric thin films;Journal of the Ceramic Society of Japan;2014

4. Strain-Induced Electrical Properties of Lead Zirconate Titanate Thin Films on a Si wafer with Controlled Oxide Electrode Structure;Japanese Journal of Applied Physics;2012-09-20

5. Strain-Induced Electrical Properties of Lead Zirconate Titanate Thin Films on a Si wafer with Controlled Oxide Electrode Structure;Japanese Journal of Applied Physics;2012-09-01

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