Electron Tunneling Through an Al2O3Thin Film on NiAl(110) in Scanning Tunneling Microscopy-Reference-Cited by-同舟云学术

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Electron Tunneling Through an Al2O3Thin Film on NiAl(110) in Scanning Tunneling Microscopy

Published:2002-12-15 Issue:Part 1, No. 12 Volume:41 Page:7496-7500
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iwasaki Hiroshi,Sudoh Koichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=12R/a=7496/pdf

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reconfigurable Physical Reservoir in GaN/α-In₂Se₃ HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer;ACS Nano;2023-04-04

2. Electrical Properties of Solution-Processed Nanolaminates of ZrO2 and Al2O3 as Gate Insulator Materials for Thin-Film Transistors;Journal of Nanoscience and Nanotechnology;2017-10-01

3. In-situ fabricated gas sensors based on one dimensional core-shell TiO2-Al2O3 nanostructures;Sensors and Actuators B: Chemical;2017-01

4. Atomic force microscopy identification of Al-sites on ultrathin aluminum oxide film on NiAl(110);Nanotechnology;2015-11-20

5. Theory of percolation and tunneling regimes in nanogranular metal films;Physical Review B;2014-06-13

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