Temperature Dependence of Photocurrent and Band Gap of Cl-Doped Semi-Insulating CdTe with Evaporated Au Electrodes-Reference-Cited by-同舟云学术

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Temperature Dependence of Photocurrent and Band Gap of Cl-Doped Semi-Insulating CdTe with Evaporated Au Electrodes

Published:2002-09-15 Issue:Part 1, No. 9 Volume:41 Page:5538-5541
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamanaka Sadanori,Tsushima Shugo,Shimizu Hidetoshi,Tokumaru Yozo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=9R/a=5538/pdf

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Simulation of 3-D CdTe Pillar Detectors;IEEE Transactions on Electron Devices;2020-12

2. On the relation between deep level compensation, resistivity and electric field in semi-insulating CdTe:Cl radiation detectors;Semiconductor Science and Technology;2016-10-21

3. Nature of the AX center participating persistent photoconductivity effect in As-doped p-ZnO;Journal of Applied Physics;2013-08-07

4. Direct current transport mechanisms in n-InSe/p-CdTe heterostructure;Semiconductor physics, quantum electronics and optoelectronics;2008-07-30

5. Electrical properties of undoped high-resistivity n-CdTe polycrystals;Semiconductors;2007-06

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