Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3 µm InGaAlAs/InP Quantum Well Lasers-Reference-Cited by-同舟云学术

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Bandgap Effects of Quantum Well Active-Layer on Threshold Current Density, Differential Gain and Temperature Characteristics of 1.3 µm InGaAlAs/InP Quantum Well Lasers

Published:2002-03-15 Issue:Part 1, No. 3A Volume:41 Page:1354-1358
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Bae Seong-Ju,Park Seoung-Hwan,Lee Yong-Tak

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=3R/a=1354/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance;IEEE Journal of Quantum Electronics;2022-04

2. Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics;Optical and Quantum Electronics;2008-08

3. Low-threshold, high-T 0 and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD;SPIE Proceedings;2004-06-18

4. Design optimization of InGaAsP–InGaAlAs 1.55 µm strain-compensated MQW lasers for direct modulation applications;Semiconductor Science and Technology;2004-02-19

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