Room Temperature Electron-Mediated Ferromagnetism in a Diluted Magnetic Semiconductor: (Ga,Mn)N-Reference-Cited by-同舟云学术

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Room Temperature Electron-Mediated Ferromagnetism in a Diluted Magnetic Semiconductor: (Ga,Mn)N

Published:2002-10-01 Issue:Part 2, No. 10A Volume:41 Page:L1069-L1071
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Huh Kwang-Soo,Ham Moon-Ho,Myoung Jae-Min,Lee Jeung-Mi,Lee Kyoung-Il,Chang Joon-Yeon,Han Suk-Hee,Kim Hi-Jung,Lee Woo-Young

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=10A/a=L1069/pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High resistive buffer layers by Fermi level engineering;Journal of Applied Physics;2023-07-11

2. Excitation density dependent photoluminescence spectra in GaMnN diluted magnetic semiconductor;Physica B: Condensed Matter;2010-09

3. Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0001) substrates;Applied Surface Science;2009-02

4. Optical investigation of ferromagnetic Ga1−xMnxN layers grown on sapphire (0001) substrates;Physica E: Low-dimensional Systems and Nanostructures;2008-08

5. The magnetic and structural properties of hydrothermal-synthesized single-crystal Sn1−xFexO2 nanograins;Journal of Magnetism and Magnetic Materials;2007-10

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