Electrical Characteristics of the Pt/SrBi2.4Ta2O9/ZrO2/Si Structure for Metal–Ferroelectric-Insulator–Semiconductor Field-Effect-Transistor Application-Reference-Cited by-同舟云学术

Electrical Characteristics of the Pt/SrBi2.4Ta2O9/ZrO2/Si Structure for Metal–Ferroelectric-Insulator–Semiconductor Field-Effect-Transistor Application

Published:2002-09-15 Issue:Part 1, No. 9 Volume:41 Page:5645-5649
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Joo-Dong,Choi Jae-Hoon,Oh Tae-Sung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=9R/a=5645/pdf

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5. Effects of Annealing on the Electrical Properties of the BLT/STA/Si Structure for Ferroelectric-Gate Field-Effect Transistors;Journal of the Korean Physical Society;2007-08-14