Highly Reliable Liquid-Phase-Deposited SiO2with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors-Reference-Cited by-同舟云学术

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Highly Reliable Liquid-Phase-Deposited SiO2with Nitrous Oxide Plasma Post-Treatment for Low-Temperature-Processed Polysilicon Thin Film Transistors

Published:2002-10-15 Issue:Part 1, No. 10 Volume:41 Page:6119-6126
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yeh Ching-Fa,Chen Darren Chi-Hsiang,Lu Cheng-Yu,Liu Chung,Lee Su-Tseng,Liu Cheng-Hong,Chen Tai-Ju

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=10R/a=6119/pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnesium β-ketoiminates as CVD precursors for MgO formation;RSC Advances;2018

2. Effect of Self-Biased Nitrous Oxide Plasma on Plasma-Enhanced Chemical-Vapor-Deposited Silicon Oxide;Japanese Journal of Applied Physics;2007-05-08

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