Distribution Profiles of B Atoms in Diborane Implanted Silicon Prepared Using an Ion Implantor without Mass Filters
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Published:1999-09-15
Issue:Part 1, No. 9A
Volume:38
Page:4953-4957
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Yokota Katsuhiro,Nakamura Kazuhiro,Nishimura Hidetoshi,Terada Kouichiro,Sakai Shigeki,Tanjou Masayasu,Takano Hiromichi,Kumagaya Masao
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering