An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides-Reference-Cited by-同舟云学术

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An AlGaAs/GaAs Tunnel Diode Integrated with Nanometer-Scale Atomic Force Microscope Tip-Induced Oxides

Published:1999-02-15 Issue:Part 2, No. 2B Volume:38 Page:L160-L162
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okada Yoshitaka,Iuchi Yoshimasa,Kawabe Mitsuo,Harris, Jr. James S.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of sample conductivity on local anodic oxidation by the tip of atomic force microscope;Journal of Applied Physics;2007-10

2. Formation of nano-oxide regions in p2+-GaAs epilayers by localized atomic force microscope probe oxidation for fabrication of nano-structure devices;Journal of Crystal Growth;2003-04

3. Self-organized InGaAs quantum dots grown on GaAs (311)B substrate studied by conductive atomic force microscope technique;Journal of Crystal Growth;2002-11

4. Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage;Japanese Journal of Applied Physics;2001-06-30

5. Ballistic transport in a GaAs/AlxGa1−xAs one-dimensional channel fabricated using an atomic force microscope;Applied Physics Letters;2001-05-28

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