Fe Doping and Preparation of Semi-Insulating InP by Wafer Annealing under Fe Phosphide Vapor Pressure-Reference-Cited by-同舟云学术

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Fe Doping and Preparation of Semi-Insulating InP by Wafer Annealing under Fe Phosphide Vapor Pressure

Published:1999-02-28 Issue:Part 1, No. 2B Volume:38 Page:985-988
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uchida Masayuki,Asahi Toshiaki,Kainosho Keiji,Matsuda Yuko,Oda Osamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors;Journal of Applied Physics;2010-12

2. Indium Phosphide Crystal Growth;Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials;2010-07-14

3. Annihilation of deep level defects in InP through high temperature annealing;Journal of Physics and Chemistry of Solids;2008-02

4. Electron irradiation induced defects in high temperature annealed InP single crystal;Acta Physica Sinica;2007

5. Micro-stimulator Design for Visual Prosthesis based on Optic Nerve Stimulation;2006 International Symposium on Biophotonics, Nanophotonics and Metamaterials;2006-10

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