Investigation on Base-Emitter Reverse Biasing: Light Emission, Junction Cross-Talk and Hot Carriers in Single-Polysilicon Quasi Self-Aligned Bipolar-Complementary Metal-Oxide Semiconductor Bipolar Transistors
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Published:1999-08-15
Issue:Part 1, No. 8
Volume:38
Page:4648-4651
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Vendrame L.,Ailloud L.,Pontcharra J. De,Gravier T.,Niel S.,Kirtsch J.,Chantre A.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering