Author:
Morita Toshiaki,Kato Mitsuo,Onuki Jin,Onose Hidekatsu,Matsuura Nobuyoshi,Sakurada Shuroku
Abstract
In order to realize uniform and low contact resistance in the low mounting force region
for large-area, high-power semiconductor devices, the effects of hardness and surface
cleanliness of metal sheets inserted between an Al cathode and Mo internal electrode on the
contact resistance were investigated as a function of mounting force. Contact resistance was
lowered with increasing cleanliness and decreasing hardness of the inserted sheet for all
values of the mounting force. A new process was developed in which an Ag-plated Mo
sheet is heat-treated at 573 K for 15 min in air. It was confirmed that devices with the
new Ag-plated Mo sheet have efficient long form reliability. The contact resistance and its
dependence on the mounting force of the devices using this sheet are of the same level as
those of an Ag-sputtered Mo sheet and an Ag sheet.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
3 articles.
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