Growth of InP Islands on LaF 3/InP(111)B Heterostructures by Molecular Beam Epitaxy
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Published:1999-02-15
Issue:Part 2, No. 2B
Volume:38
Page:L192-L194
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Ritchie Sayuri,Beaudoin Mario,Tiedje Thomas,Pinnington Tom
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering