The Effect of Band Gap Narrowing and Two-Dimensional Grain on High-Temperature Properties of Polysilicon Emitter Bipolar Junction Transistors
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Published:1999-08-15
Issue:Part 1, No. 8
Volume:38
Page:4703-4708
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Hong Gia M.,Gong Jeng,Lu Shu C.,Lin Jian Y.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering