High Power Operations of 980 nm Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs Pump Lasers Prepared by Multi-step Metalorganic Vapor Phase Epitaxial Growth with Ion Implanted Channels-Reference-Cited by-同舟云学术

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High Power Operations of 980 nm Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs Pump Lasers Prepared by Multi-step Metalorganic Vapor Phase Epitaxial Growth with Ion Implanted Channels

Published:1999-08-15 Issue:Part 1, No. 8 Volume:38 Page:4756-4763
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jang Dong Hoon,Lee Jung Kee,Park Kyung,Cho Ho Sung,Nam Eun Soo,Park Chul,Shim Jong In,Jeong Ji Chai,Jeong Ki,Park Soo Jin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers;Laser & Photonics Reviews;2011-03-07

2. Cathodoluminescence degradation signatures of AlGaAs-based high-power laser arrays;physica status solidi (a);2005-03

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