Effects of Etch-Induced Damage and Contamination on the Physical and Electrical Properties of Cobalt Silicides-Reference-Cited by-同舟云学术

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Effects of Etch-Induced Damage and Contamination on the Physical and Electrical Properties of Cobalt Silicides

Published:1999-10-15 Issue:Part 1, No. 10 Volume:38 Page:5788-5791
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Hyeon-Soo,Yoon Jong-Ku,Lee Young-Hyuk,Ko Young-Wook,Park Jong-Wan,Yeom Geun-Young

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Friction-induced nanofabrication method to produce protrusive nanostructures on quartz;Nanoscale Research Letters;2011-04-07

2. Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects;Microelectronic Engineering;2003-11

3. Characteristics of residues and optical change of HT PSM during stepwise wet cleaning and optimization of HT PSM cleaning process;SPIE Proceedings;2002-07-31

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