Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface
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Published:1999-05-15
Issue:Part 1, No. 5A
Volume:38
Page:2704-2706
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Aigo Takashi,Fujita Yasuhisa,Tachikawa Akiyoshi,Ohta Yasumitsu
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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