Behavior of Electron Traps in Phosphidized GaAs by Nitrogen Plasma Treatment
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Published:1999-01-15
Issue:Part 2, No. 1A/B
Volume:38
Page:L17-L19
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Sugino Takashi,Nozu Satoshi,Matsuda Koichiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering