High Temperature Operation of AlGaInAs Ridge Waveguide Lasers with a p-AlInAs Electron Stopper Layer

Abstract

1.3 µm AlGaInAs/InP ridge waveguide lasers with a p-AlInAs electron stopper layer (ESL) were fabricated and the effect of the ESL was investigated. By inserting an ESL between active and separate confinement heterostructure (SCH) layers, the characteristic temperature of threshold current and slope efficiency were improved, especially in the higher operating temperature range, and the maximum operating temperature under CW operation was improved by 20°C. An excellent CW characteristic temperature of 111 K was obtained with operating temperatures between 20 and 80°C and the record high operating temperature of 210°C was achieved with the 700-µm-long laser under pulse operation. Power reductions at a constant current with increasing temperature were determined at 80°C as -1.27 dB and -1.67 dB under pulse and CW operations, respectively.