Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride;Thin Solid Films;2008-01
2. Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO2with High Haze Factors;Japanese Journal of Applied Physics;2002-11-15
3. Characterization of low temperature epitaxial Si and Si1−yCy films grown by hot wire cell method;Materials Science and Engineering: B;2002-02
4. Growth and characterization of phosphorus doped Si1−yCy alloy grown by photo- and plasma-CVD at very low temperature;Materials Science and Engineering: B;2002-02
5. Characterization of Tensile Strained Si1-yCyAlloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature;Japanese Journal of Applied Physics;2001-07-15
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