Epitaxial Growth of GaN on LaAlO3(100) Substrate by RF Plasma Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Epitaxial Growth of GaN on LaAlO3(100) Substrate by RF Plasma Assisted Molecular Beam Epitaxy

Published:1999-11-15 Issue:Part 1, No. 11 Volume:38 Page:6487-6488
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Jeoung Ju,Kang Kwang Yong,Park Young Sin,Yang Chang Soo,Kim Hyeon Soo,Kim Kun Ho,Kang Tae Won,Park Sung Ho,Lee Jeong Yong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterostructural Interface Modelling;Materials Research Foundations;2019-10-25

2. Epitaxial growth of GaN films on unconventional oxide substrates;J. Mater. Chem. C;2014

3. Growth of nonpolar (112¯0) ZnO films on LaAlO3 (001) substrates;Applied Physics Letters;2008-09-22

4. Non-polar a-plane GaN grown on LaAlO3 (001) substrate by pulsed laser deposition;Journal of Crystal Growth;2008-04

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