Interface States in n-ZnSe/n-GaAs Heterostructure Characterized by Deep Level Transient Spectroscopy Technique-Reference-Cited by-同舟云学术

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Interface States in n-ZnSe/n-GaAs Heterostructure Characterized by Deep Level Transient Spectroscopy Technique

Published:1989-04-20 Issue:Part 2, No. 4 Volume:28 Page:L541-L543
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsumoto Takashi,Ito Yuuji,Ishida Tetsuro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures;Semiconductors;1999-02

2. Defects in wide band gap II-VI crystals;Materials Science and Engineering: R: Reports;1997-11

3. Deep-level transient spectroscopic studies of ZnSe - GaAs heterointerfaces;Journal of Physics: Condensed Matter;1997-02-03

4. Surface passivation of GaAs MESFETs;IEEE Transactions on Electron Devices;1997

5. Effects of GaAs buffer layer and lattice-matching on deep levels in Zn(S)Se/GaAs heterostructures;Journal of Electronic Materials;1996-02

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